Peculiarities of the electron transport in very short period InAs/GaAs superlattices near quantum dot formation

The photoluminescence, magnetoresistance, Shubnikov-de Haas and Hall effect have been investigated in short period InAs/GaAs superlattices with different numbers of periods (3⩽N⩽24) and a total thickness of View the MathML source as a function of InAs layer thickness Q in the range 0.33⩽Q⩽2.7 monolayer (ML). These superlattices represent a quantum well with average composition In0.16Ga0.84As. Photoluminescence intensity and electron mobility enhancement occur when the InAs layer thickness Q is equal to 0.33 or View the MathML source. When View the MathML source, quantum dots are formed. The mobility of electrons and the anisotropy of resistivity do not depend monotonically on the thickness Q of InAs layers.