Title of article :
Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices
Author/Authors :
Marta Gryglas، نويسنده , , Michal Baj، نويسنده , , Benoit Jouault، نويسنده , , Giancarlo Faini، نويسنده , , Antonella Cavanna، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I–V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers δ-doped with silicon in the middle of AlAs layer. At View the MathML source and magnetic field up to View the MathML source we resolved well-separated peaks attributed to resonant tunnelling via individual donors.
Keywords :
X-minimum-related donor , Resonant tunnelling , Single impurity
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
