Title of article
Optical and electrical spin injection in spin-LED
Author/Authors
B.L. Liu، نويسنده , , M. Senes، نويسنده , , S. Couderc، نويسنده , , J.F Bobo، نويسنده , , X. Marie، نويسنده , , T. Amand، نويسنده , , C. Fontaine، نويسنده , , A. Arnoult، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
3
From page
358
To page
360
Abstract
We have fabricated and characterized a spin-LED with a tunnel barrier made of a ferromagnetic metal (Co)/semiconductor (AlGaAs) Schottky junction [Phys. Rev. B 62 (2000) R16267]. Under a longitudinal magnetic field of View the MathML source, we measured a circular polarization degree of the electro-luminescence of ∼4%. Using the electron spin relaxation and recombination times measured by time-resolved photoluminescence, the yield of spin injection through Schottky contact of the spin-LED has been determined. We find η∼30%.
Keywords
Spin injection , Circular polarization , Quantum well device , Time-resolved spectroscopy
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1045088
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