• Title of article

    Electrostatic quantum dots with designed shape of confinement potential

  • Author/Authors

    K. Lis، نويسنده , , S. Bednarek، نويسنده , , B. Szafran، نويسنده , , J. Adamowski، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    494
  • To page
    497
  • Abstract
    In electrostatic (gated) quantum dots, the potential confining the electrons is generated by the electrostatic field, which is created by the external voltages applied to the leads. Changing the geometry of the nanodevice we can obtain a diverse class of confinement potentials. We discuss the choice of the nanodevice parameters, which allows us to get the confinement potentials with the designed shape: from the rectangular potential well to the potential well with smooth edges. In particular, we find the conditions, under which the confinement potential possesses the Gaussian shape or is parabolic in a large region of the quantum dot.
  • Keywords
    Quantum dot , Confinement potential
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2003
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1046167