Influence of an epitaxial Si capping of Ge islands on Si(0 0 1) and Si(1 1 0) by LPCVD

The influence of the Si overgrowth in the Ge/Si(0 0 1) and Ge/Si(1 1 0) systems has been studied. Rutherford backscattering spectroscopy analysis pointed out a reduced number of Ge atoms in capped samples performed on Si(1 1 0). Atomic force microscopy and transmission electron microscopy allowed us to propose a model to explain this behaviour. A way of explanation is given to clarify why such a phenomenon does not take place in the samples realized on Si(0 0 1).