Title of article :
Composition profiling at the atomic scale in III–V nanostructures by cross-sectional STM
Author/Authors :
P.M. Koenraad، نويسنده , , D.M. Bruls، نويسنده , , J.H. Davies، نويسنده , , S.P.A. Gill، نويسنده , , Fei Long، نويسنده , , M. Hopkinson، نويسنده , , M. Skolnick، نويسنده , , J.H. Wolter، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
Using cross-sectional STM we have studied the local composition in III/V nanostructures such as GaAs/InGaAs quantum wells, InGaNAs/InP quantum wells and quantum dots, and InAs/GaAs self-assembled quantum dots. We are able to determine the local composition by either simply counting the constituent atoms, measuring the local lattice constant or measuring the relaxation of the cleaved surface due to the elastic field of the buried strained nanostructures.
Keywords :
X-STM , III/V nanostructures , Composition profiling
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
