Lattice dynamics of a strained GaN–AlN quantum well structure

A wurtzite GaN View the MathML source–AlN View the MathML source superlattice (SL), grown on an AlN buffer layer (BL) and on a 6H-SiC substrate, was studied by X-ray diffraction and Raman spectroscopy. The measurements on the BL allowed one to determine for hexagonal AlN the deformation potentials of the E2 phonon, which governs its strain-induced frequency shift. The components of the strain tensor of both GaN and AlN layers in the SL were derived.