Title of article
Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD
Author/Authors
L.D. Moldavskaya، نويسنده , , V.I. Shashkin، نويسنده , , M.N. Drozdov، نويسنده , , Yu.N. Drozdov، نويسنده , , V.M. Daniltsev، نويسنده , , A.V. Murel، نويسنده , , B.A. Andreev، نويسنده , , A.N. Yablonsky، نويسنده , , S.A. Gusev، نويسنده , , D.M. Gaponova، نويسنده , , O.I. Khrykin، نويسنده , , A.Yu. Lukʹyanov، نويسنده , , E.N. Sadova، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
634
To page
635
Abstract
InGaAs/GaAs quantum dots (QD) multilayer modulation-doped structures for infrared photodetector application were grown by the low-pressure metalorganic chemical vapor deposition. Normally incidence photoconductivity (PC) with a lateral electron transport was observed in samples, when the In supply during the QD formation was varied. At low temperature (near View the MathML source) PC peak was observed near View the MathML source. With increasing temperature another PC peak appeared near View the MathML source.
Keywords
FIR photoconductivity , Quantum dots
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046238
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