Author/Authors :
L.D. Moldavskaya، نويسنده , , V.I. Shashkin، نويسنده , , M.N. Drozdov، نويسنده , , Yu.N. Drozdov، نويسنده , , V.M. Daniltsev، نويسنده , , A.V. Murel، نويسنده , , B.A. Andreev، نويسنده , , A.N. Yablonsky، نويسنده , , S.A. Gusev، نويسنده , , D.M. Gaponova، نويسنده , , O.I. Khrykin، نويسنده , , A.Yu. Lukʹyanov، نويسنده , , E.N. Sadova، نويسنده ,
Abstract :
InGaAs/GaAs quantum dots (QD) multilayer modulation-doped structures for infrared photodetector application were grown by the low-pressure metalorganic chemical vapor deposition. Normally incidence photoconductivity (PC) with a lateral electron transport was observed in samples, when the In supply during the QD formation was varied. At low temperature (near View the MathML source) PC peak was observed near View the MathML source. With increasing temperature another PC peak appeared near View the MathML source.
