Title of article :
Stabilization energies of charged multiexciton complexes calculated at configuration interaction level
Author/Authors :
S. Corni، نويسنده , , M. Braskén، نويسنده , , M. Lindberg، نويسنده , , J. Olsen، نويسنده , , D. Sundholm، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
Recombination and stabilization energies of multiexcitons confined in positively and negatively charged semiconductor InGaAs/GaAs quantum dot (QD) samples have been studied by employing large-scale configuration interaction (CI) calculations. The CI calculations show that at most six electrons or two holes can be confined in the QD. Multiply charged multiexciton complexes with up to five excess electrons or two excess holes are also found to be stable, even when a few electron–hole pairs are present in the QD. The chemical potential functions for charged QD samples do not possess the pronounced stepped form as obtained for the corresponding neutral multiexciton complexes. The negatively and the positively charged excitons (negative and positive trions) lie lower in energy as compared to a neutral exciton and a single non-interacting charge carrier in the lowest single-particle state of another quantum dot. The other charged multiexciton complexes studied are not confined with respect to the corresponding neutral multiexciton and a non-interacting charge carrier. To include the contributions from the heavy-hole light-hole (HH–LH) coupling, a perturbative treatment of the band-mixing effects was implemented. The perturbation-theory calculations show that the HH–LH coupling does not shift the energies in the present InGaAs/GaAs QD sample.
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures