Confinement Stark effect and electroabsorption in semiconductor cylindrical layer

The influence of transversal homogeneous electrical field on one-electron states in quantized cylindrical layer is considered. The explicit dependence of Stark shift magnitude on external field intensity and geometrical sizes of system is obtained. The electroabsorption coefficient for interband and inband (“intersubband”) transitions in a layer in dipole approximation is calculated. The corresponding selection rules for these transitions are obtained.