Title of article
The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes
Author/Authors
T. Sandu، نويسنده , , W.P. Kirk، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
10
From page
815
To page
824
Abstract
Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation.
Keywords
Resonant tunneling , Non-equilibrium Greenיs functions , Quantum well , Intrinsic bistability
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046307
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