Effect of the dielectric-constant mismatch and magnetic field on the binding energy of hydrogenic impurities in a spherical quantum dot

Within the effective mass approximation and variational method the effect of dielectric constant mismatch between the size-quantized semiconductor sphere, coating and surrounding environment on impurity binding energy in both the absence and presence of a magnetic field is considered. The dependences of the binding energy of a hydrogenic on-center impurity on the sphere and coating radii, alloy concentration, dielectric-constant mismatch, and magnetic field intensity are found for the GaAs–Ga1−xAlxAs–AlAs (or vacuum) system.