Title of article
A study on photoreflectance characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor structures
Author/Authors
Ji Yu Ming، نويسنده , , S.J. Lee، نويسنده , , I.H. Bae، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
131
To page
134
Abstract
We study the photoreflectance (PR) characteristics of interface effect in Si delta-doped Al0.24Ga0.76As/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. We observed weak 11H transition from the PR spectrum of pHEMT, and the room- and low-temperature PR spectra exhibited Franze–Keldysh oscillations at energies above the GaAs band gap. From the period of these oscillations, the electric feild at the Al0.24Ga0.76As/In0.2Ga0.8As/GaAs interface was determined and behaviour decreasing with temperature was observed.
Keywords
pHEMT , Photoreflectance
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046338
Link To Document