InAs substrate

We have grown GaAs antidots in InAs matrix on (100) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and View the MathML source. For View the MathML source GaAs deposition, the grown antidots have a size of about 15–View the MathML source in base diameter and about 2–View the MathML source in height with a density about 3–View the MathML source.