Title of article
Optical properties in porous Si investigated by an anodization current variation of photoluminescence spectra
Author/Authors
Jae-In Yu، نويسنده , , D.L Kim، نويسنده , , D.Y. Lee، نويسنده , , Jae-Gon Yun، نويسنده , , In-Ho Bae، نويسنده , , J.H. Lee، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
3
From page
93
To page
95
Abstract
Photoluminescence (PL) measurement on porous Si (PS) is carried out to investigate the interdefects. This article presents experimental results supporting the role of the ballistic transport in strong “red” PL of porous silicon. It is shown that this PL band connects with emission of oxide-related defects at the Si/SiOx interface. Also, the activation energy of the electrons is confined in the PS, as obtained from the temperature-dependent PL spectra. The activation energies of the electrons confined in PS A peak and B peak were 67 and 61 meV, respectively.
Keywords
Porous Si , Photoluminescence spectra
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046429
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