Title of article
Photoinduced voltage shift in a three-barrier, two-well resonant tunneling structure integrated with a 1.2-μm-thick n-type GaAs layer
Author/Authors
Xia Zhou، نويسنده , , Houzhi Zheng، نويسنده , , Guirong Li، نويسنده , , Xiao-Bing Hu، نويسنده , , Huadong Gan، نويسنده , , Hui Zhu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
5
From page
242
To page
246
Abstract
By integrating a three-barrier, two-well resonant tunneling structure with a 1.2-μm-thick, slightly doped n-GaAs layer, a photoinduced voltage shift on the order of magnitude of 100 mV in resonant current peaks has been verified at an irradiance of low light power density. The 1.2-μm-thick, slightly doped n-GaAs layer manifests itself of playing an important role in enhancing photoelectric sensitivity.
Keywords
Photoinduced , Voltage shift , Resonant tunneling structure
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046452
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