Title of article
Visible photoluminescence from Ge quantum dots
Author/Authors
K.W. Sun، نويسنده , , S.H. Sue، نويسنده , , C.W. Liu، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
6
From page
525
To page
530
Abstract
Spectroscopic analyses on stacked Ge quantum dots (QDs) on Si (1 0 0) substrates are presented. Strong and visible photoluminescence around 620 nm from stacked Ge QDs is observed. The luminescence is intense and clearly visible to the naked eye at both room temperature and low temperature. We have investigated the temperature dependence of the luminescence, as well as the composition of Ge dots via transmission electron microscopy and the Raman spectroscopy. Possible causes of the visible luminescence are also speculated in this report.
Keywords
Photoluminescence , Ge quantum dot , Raman spectroscopy
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046498
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