Title of article
Self-assembling of C and Sn in Ge
Author/Authors
V.A Elyukhin، نويسنده , , S.F D?az Albarr?n، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
4
From page
552
To page
555
Abstract
Self-assembling of isoelectronic C and Sn impurities in Ge is predicted. The formation of the 1C4Sn tetrahedral cells is thermodynamically profitable in Ge-rich CxSnyGe1−x−y (4x
Keywords
Self-assembling , Isoelectronic impurities
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046502
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