Title of article :
Coherent magnetoresistance of an interacting quantum dot
Author/Authors :
Ping Zhang، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
The coherent tunnel magnetoresistance is studied in a double junction system using spin-dependent Anderson model. It is found that in contrast to the sequential tunneling description, the tunnel magneto resistance (TMR) significantly decreases in coherent tunneling regime. Remarkably, it is showed that the I–V characteristics and TMR are not sensitive to the intradot spin–flip transition.
Keywords :
Quantum dot , Magnetoresistance
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures