Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga1−xInxNyAs1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga1−xInxNyAs1−y quantum wells on InP substrates is better than than that of the compressively strained Ga1−xInxNyAs1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga1−xInxNyAs1−y quantum wells with In concentrations of x⩽0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga1−xInxNyAs1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga1−xInxNyAs1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.