Investigation of a new modified source/drain for diminished self-heating effects in nanoscale MOSFETs using computer simulation

In this paper, we demonstrate that by introducing a buried oxide in a bulk MOSFET only under the source and drain regions, i.e., using an oxygen implanted source/drain (OISD) structure, the drain capacitance of a nanoscale MOSFET can be made close to that of a silicon-on-insulator SOI MOSFET while the self-heating effects are highly diminished and are similar to that of a bulk MOSFET. Two-dimensional simulation is used to optimize the length and thickness of the OISD regions.