Low-temperature electron mobility in a strictly 2D layer

Theoretical low-temperature electron mobility of a two-dimensional electron gas (2DEG) confined near the interface of a modulation δ-doped AlxGa1−xAs/GaAs heterostructure with a very thin width GaAs (delta well) is calculated by using Boltzmann equation and relaxation time approximation. In low temperatures the electrons are scattered from ionized impurities. Screening of the charged impurities by electrons is properly taken into account by using random phase approximation method. At last the mobility is plotted as a function of donor concentration at different temperatures and with various spacer widths.