Title of article
A resonant MOSFET gate driver with efficient energy recovery
Author/Authors
Chen، Yuhui نويسنده , , F.C.، Lee, نويسنده , , L.، Amoroso, نويسنده , , Wu، Ho-Pu نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-469
From page
470
To page
0
Abstract
High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.
Keywords
Quantum dots , Fluorescence resonance energy transfer , immunoglobulin G
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Serial Year
2004
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Record number
104661
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