• Title of article

    A resonant MOSFET gate driver with efficient energy recovery

  • Author/Authors

    Chen، Yuhui نويسنده , , F.C.، Lee, نويسنده , , L.، Amoroso, نويسنده , , Wu، Ho-Pu نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    -469
  • From page
    470
  • To page
    0
  • Abstract
    High frequency pulse-width modulation (PWM) converters generally suffer from excessive gate drive loss. This paper presents a resonant gate drive circuit that features efficient energy recovery at both charging and discharging transitions. Following a brief introduction of metal oxide semiconductor field effect transistor (MOSFET) gate drive loss, this paper discusses the gate drive requirements for high frequency PWM applications and common shortcomings of existing resonant gate drive techniques. To overcome the apparent disparity, a new resonant MOSFET gate drive circuit is then presented. The new circuit produces low gate drive loss, fast switching speed, clamped gate voltages, immunity to false trigger and has no limitation on the duty cycle. Experimental results further verify its functionality.
  • Keywords
    Quantum dots , Fluorescence resonance energy transfer , immunoglobulin G
  • Journal title
    IEEE TRANSACTIONS ON POWER ELECTRONICS
  • Serial Year
    2004
  • Journal title
    IEEE TRANSACTIONS ON POWER ELECTRONICS
  • Record number

    104661