Title of article :
Electron spectral properties of the InAs/GaAs quantum ring
Author/Authors :
I. Filikhin، نويسنده , , V.M. Suslov، نويسنده , , B. Vlahovic، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2006
Abstract :
A 3D model of semiconductor quantum ring (QR) based on the single sub-band approach with an energy-dependent electron effective mass is considered. The non-linear energy confinement problem is numerically solved iteratively by using the finite elements method. We calculate the energy spectrum of the electron states for the InAs/GaAs QR using the geometrical parameters obtained in the fabrication of such rings by A. Lorke, et al. (Phys. Rev. Lett. 84 (2000) 2223). The calculated energies are compared with the experimental data.
Keywords :
Quantum dots , Electron states , Single-electron tunnelling
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures