Near UV photoluminescence of Hg-doped GaN nanowires

Mass Hg-doped GaN nanowires with an average diameter of about 25 nm and lengths up to hundreds of micrometers are fabricated by chemical vapor reaction. The as-synthesized products have a single crystal phase and grow along the 〈0 0 1〉 direction. The growth of Hg-doped GaN nanowires is suggested for quasi vapor–solid mechanism (QVSM). In particular, for as large-scale GaN nanowires like films, a novel strong near ultraviolet PL spectrum appears with a doping Hg where the Hg-doped GaN nanowires are found to be responsible for the different characteristics; the PL mechanism is explained in detail.