Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

Silicon carbide (3C–SiC) nanowhiskers were synthesized in a special vapor–solid process. In this process, silicon powder and carbon black were used as reactants, but they were separated by a thin and holed alumina plate so that the formation of SiC nanowhiskers is attributed to the reaction of gaseous silicon with carbon black particles. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to characterize the product. Based on the characterizations, a formation mechanism of SiC nanowhiskers is proposed.