Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots

Based on the framework of effective-mass approximation and variational approach, the luminescent properties are investigated theoretically in self-formed wurtzite GaN/AlxGa1−xN single-quantum dots (QDs). Considering the three-dimensional (3D) confinement of electron and hole pair and the strong built-in electric field effects, the exciton binding energy, the emission wavelength and the oscillator strength are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of GaN/AlxGa1−xN QDs.