Initial growth of MnAs on GaAs(0 0 1)-c(4×4) reconstructed surface

We have investigated the initial growth mechanism of MnAs on GaAs(0 0 1)-c(4×4)α reconstructed surfaces. We found that the MnAs deposition on GaAs(0 0 1)-c(4×4)α surface promotes to break the Ga–As asymmetric dimers and modulates the dimer characteristics to symmetric As–As dimer formation on the surfaces. The Ga atoms consisting of c(4×4)α reconstructed surface are contributed to the anomaly in the surface coverage during the MnAs growth. We also found that 1 ML zinc-blende-type layer is realized by the MnAs growth and then hexagonal NiAs-type MnAs islands are formed on the surface.