Author/Authors :
Li-Hung Lin، نويسنده , , Kui-Ming Chen، نويسنده , , Shiou-Shian Han، نويسنده , , C.-T. Liang، نويسنده , , Wen-Chang Hsueh، نويسنده , , Kuang Yao Chen، نويسنده , , Zhihao Sun، نويسنده , , P.H. Chang، نويسنده , , N.C. Chen، نويسنده , , Chin-An Chang، نويسنده ,
Abstract :
The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of Te∼I1.42 was obtained, which is in contrast to Te∼I0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample.
Keywords :
Two-dimensional electron system , Current scaling , Si , GaN , Electron heating
