Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method

CdS, Cd0.5In0.5S and In2S3 thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on a glass substrate at room temperature. These films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical and electrical properties of these films have been investigated as a function of temperature. The absorption measurements were carried out in the temperature range 10–320 K with a step of 10 K. The band gap energies ‘Eg’ for CdS, Cd0.5In0.5S and In2S3 thin films have been found as 2.38, 2.52 and 2.63 eV at 10 K, respectively. The electrical resistivity of CdS, Cd0.5In0.5S and In2S3 thin films have been determined using a ‘dc’ two-probe method, in the temperature range of 300–450 K. The electrical resistivity values have been calculated at 300 K, as 2×106 Ω cm, 3.5×107 Ω cm and 1.5×107 Ω cm for CdS, Cd0.5In0.5S and In2S3, respectively. This is one of the first studies which led to deposition of the CdInS thin films by using the SILAR method.