Title of article
Growth and characterization of the InN film ammonification technique
Author/Authors
Fuxue Wang، نويسنده , , Chengshan Xue، نويسنده , , Huizhao Zhuang، نويسنده , , Xiaokai Zhang، نويسنده , , Yujie Ai، نويسنده , , Lili Sun، نويسنده , , Zhaozhu Yang، نويسنده , , Hong Li، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2007
Pages
4
From page
664
To page
667
Abstract
InN film was synthesized by ammoniating indium film on Si(1 1 1) substrates. The samples were analyzed by X-ray diffraction (XRD), X-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The XRD and TEM show that nanoparticles were hexagonal InN single crystals.
Keywords
InN , Ammoniating , Single crystal
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2007
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1046897
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