Title of article :
Growth and characterization of the InN film ammonification technique
Author/Authors :
Fuxue Wang، نويسنده , , Chengshan Xue، نويسنده , , Huizhao Zhuang، نويسنده , , Xiaokai Zhang، نويسنده , , Yujie Ai، نويسنده , , Lili Sun، نويسنده , , Zhaozhu Yang، نويسنده , , Hong Li، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2007
Pages :
4
From page :
664
To page :
667
Abstract :
InN film was synthesized by ammoniating indium film on Si(1 1 1) substrates. The samples were analyzed by X-ray diffraction (XRD), X-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The XRD and TEM show that nanoparticles were hexagonal InN single crystals.
Keywords :
InN , Ammoniating , Single crystal
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2007
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1046897
Link To Document :
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