Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn

Self-assembling of 4C10Sn clusters in Ge co-doped with C and Sn is considered. The free energies of Ge-rich CxSnyGe1−x−y (x⩽0.02, x⩾0.4y) random alloys and alloys with 4C10Sn and 1C4Sn clusters are estimated at temperature of 773 K. The concentration conditions when the free energy of CxSnyGe1−x−y with 4C10Sn clusters is smaller than those of random alloys and alloys with 1C4Sn clusters are obtained. Occurrence of 4C10Sn clusters is a result of a stronger decrease of the strain energy after such self-assembling than after self-assembling of 1C4Sn clusters.