• Title of article

    Observation of anti-bonding excited state in charging diagram of a few-electron double dot

  • Author/Authors

    Tsuyoshi Hatano، نويسنده , , Yasuhiro Tokura، نويسنده , , Shinichi Amaha، نويسنده , , Toshihiro Kubo، نويسنده , , Seigo Tarucha، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2008
  • Pages
    3
  • From page
    1238
  • To page
    1240
  • Abstract
    We fabricated a unique hybrid vertical–lateral double dot device with two dots coupled in parallel to study the excitation energy spectra with the number of electrons in each dot and inter-dot level detuning as parameters. We measured the charging diagram for a finite bias voltage and observed the tunnel-coupled bonding state and anti-bonding state. The separation between the two states is a direct measure of the inter-dot tunnel coupling energy. We use this energy and other characteristic energies derived from the charging diagram to characterize the exchange interaction energy.
  • Keywords
    Ground and excited states , Bonding and anti-bonding states , Tunnel coupling
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2008
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1047031