Title of article
Observation of anti-bonding excited state in charging diagram of a few-electron double dot
Author/Authors
Tsuyoshi Hatano، نويسنده , , Yasuhiro Tokura، نويسنده , , Shinichi Amaha، نويسنده , , Toshihiro Kubo، نويسنده , , Seigo Tarucha، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
1238
To page
1240
Abstract
We fabricated a unique hybrid vertical–lateral double dot device with two dots coupled in parallel to study the excitation energy spectra with the number of electrons in each dot and inter-dot level detuning as parameters. We measured the charging diagram for a finite bias voltage and observed the tunnel-coupled bonding state and anti-bonding state. The separation between the two states is a direct measure of the inter-dot tunnel coupling energy. We use this energy and other characteristic energies derived from the charging diagram to characterize the exchange interaction energy.
Keywords
Ground and excited states , Bonding and anti-bonding states , Tunnel coupling
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047031
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