Fabrication and characterization of a laterally coupled vertical triple quantum dot device

Laterally coupled vertical triple quantum dots (tQDs) are newly fabricated and their transport properties are investigated. Our device consists of three pillars, each with a separate gate electrode, fabricated from a double-barrier structure and arranged in an equilateral triangular arrangement, with a common source and drain electrodes. The measured conductance on sweeping the two gate voltages shows three series of Coulomb oscillations and this indicates that the tQDs in our device are formed in the intended manner.