Two-band model for transport properties of silicon (1 1 1) MOSFET structures with high mobility

For zero temperature we present theoretical results for the mobility of a two-dimensional electron gas on the surface of silicon (1 1 1) in the case of impurity scattering and compare with experiments. We use a two-band model (7K-model) for valley degeneracy gv=2 and 4, which was proposed recently in the literature. A comparison between theory and recent experimental results shows reasonable agreement. Within the two-band model we predict the magnetoresistance in a parallel magnetic field and the Dingle temperatures of the two bands as function of the carrier density.