Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under electric field

Using the potential morphing method in the effective mass approximation, we have studied the behavior of the impurity binding energy as a function of the impurity position, for different applied electric fields, different Al concentrations at the well center, in strong, intermediate and weak confinement, for a GaAs/Ga1−xAlxAs inverse parabolic quantum well. Our results indicate that the impurity binding energy has the same behavior as the spatial distribution of the electron ground state wavefunction and also that an electron localization appears only in the intermediate and weak confinement regime when the electric field takes non-zero values.