Title of article :
Type-I/type-II exciton in strained Si/SiGe multi-QWs
Author/Authors :
K.Y. Wang، نويسنده , , W.P. Huang، نويسنده , , T.C. Lin، نويسنده , , C.P. Lee، نويسنده , , Rita Y.T Sung، نويسنده , , R.J. Nicholas، نويسنده , , H.H. Cheng، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
Using magneto-luminescence (ML) measurement, we have observed the formation of magneto-excitons with either type-I or type-II band alignment depending on the strain distribution in the Si/SiGe quantum well structures. This observation is consistent with the analysis of strain-induced band shifting and exciton-transition energy.
Keywords :
Magneto-luminescence , Si/Ge heterostructure , Band alignment.
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
