Valley-splitting edge-channel transport in a Si/SiGe quantum Hall system

We observe an adiabatic transport phenomena of electrons in valley-splitting quantum Hall edge channels for the first time using a high-mobility Si/SiGe two-dimensional electron system. We find that the scattering event between the valley-splitting edge channels is suppressed over a distance of View the MathML source, which is surprisingly longer than that expected from the valley-splitting energy gap in Si.