Title of article
Metallic behavior in low-disorder two-dimensional hole systems in the presence of long- and short-range disorder
Author/Authors
W.R. Clarke، نويسنده , , C.E. Yasin، نويسنده , , A.R. Hamilton، نويسنده , , A.P. Micolich، نويسنده , , M.Y. Simmons، نويسنده , , K. MURAKI، نويسنده , , Y. Hirayama، نويسنده , , M. Pepper، نويسنده , , D.A. Ritchie، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
1599
To page
1601
Abstract
We compare directly the metallic behavior of high-quality, two-dimensional hole systems (2DHSs) in two GaAs device structures—one dominated by short-range disorder and the other by long-range disorder. We find that the type of disorder strongly affects the metallic behavior of the 2DHSs. In particular, we find that metallic behavior is enhanced in 2D systems with a high proportion of large-angle scattering events.
Keywords
Metal–insulator transition , Disorder , 2D hole systems
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047148
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