2DEG based on strained Si on SGOI substrate

We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pre-growth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 105 cm2 V−1 s−1 at T=0.4 K and 2000 cm2 V−1 s−1 at T=300 K was obtained.