Resonance tunneling through a single interstitial Mn impurity in a GaAs quantum well

The electronic structure of the impurity d-levels of interstitial Mni in a GaAs quantum well (QW) is found to create deeply bound donor states located within the band gap. This behavior results from lowering the symmetry of the band states in 2DEG, which, in turn, lifts symmetry bans on the hybridization matrix elements. An impurity-assisted tunneling current is enabled by discrete bound donor states with energies located below the first conduction QW subband.