Author/Authors :
L.H. Ho، نويسنده , , W.R. Clarke، نويسنده , , R. Danneau، نويسنده , , O. Klochan، نويسنده , , A.P. Micolich، نويسنده , , M.Y. Simmons، نويسنده , , A.R. Hamilton، نويسنده , , M. Pepper، نويسنده , , D.A. Ritchie، نويسنده ,
Abstract :
We present a technique for studying the effect of screening long-range Coulomb interactions in a 2D system using a bilayer heterostructure. It allows us to vary the distance between a 2D system and a screening ground plane in the same sample and cooldown, and hence without changing the disorder potential. We implement this technique in a 2D hole system in GaAs, and examine the effect of screening on the 2D metallic behaviour.
Keywords :
2D hole system , Screening , Coulomb interaction , Bilayer heterostructure
