Title of article
Room temperature emission from CdSe single quantum dots embedded in high bandgap barrier material
Author/Authors
R. Arians، نويسنده , , T. Kümmell، نويسنده , , A. Forchel and G. Bacher ، نويسنده , , Deborah A. Gust، نويسنده , , C. Kruse، نويسنده , , D. Hommel، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
1938
To page
1940
Abstract
We investigated the impact of barrier design on both the photoluminescence and electroluminescence of CdSe quantum dots. Quantum dots embedded in ZnSSe/MgS barriers show a significant improvement of the room temperature quantum efficiency that allows us to detect efficient room temperature emission of a single quantum dot. Embedding the CdSe/ZnSSe/MgS active layer into a p–i–n structure, we could achieve electroluminescence from one single quantum dot at 4 K.
Keywords
II–VI semiconductor , Photoluminescence , Single quantum dot , Room temperature emission , Electroluminescence
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047252
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