Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.