Theoretical analysis of image emitting GaInNAs QDʹs on different substrates

We present a theoretical study which compares the electronic and optical properties of dilute nitrogen GaInNAs quantum dots (QD) on two different substrates, GaAs and InP. The calculations are based on a 10 band k⋅p band-anti-crossing (BAC) Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. We show that View the MathML source emission can be achieved on both substrates through appropriate tailoring of the QD size. On GaAs, the dominant dipole matrix element is the View the MathML source and View the MathML source light polarization, whereas on InP substrate, the dominant component is the View the MathML source light polarization. Our results also identifiy the different In and N QD compositions required for long-wavelength emission on both substrates.