Title of article
Anti-binding of biexcitons in (2 1 1)B InAs/GaAs piezoelectric quantum dots
Author/Authors
G.E. Dialynas، نويسنده , , C. Xenogianni، نويسنده , , S. Tsintzos، نويسنده , , E. Trichas، نويسنده , , P.G. Savvidis، نويسنده , , G. Constantinidis، نويسنده , , J. Renard، نويسنده , , B. Gayral، نويسنده , , Z. Hatzopoulos، نويسنده , , N.T. Pelekanos، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
2113
To page
2115
Abstract
We report on single dot spectroscopy of polar (2 1 1)B InAs/GaAs quantum dots grown by molecular beam epitaxy. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed to the presence of strong piezoelectric field.
Keywords
Quantum dots , Piezoelectric effect , Exciton related effects
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047308
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