Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

Transitions between direct and indirect excitons with change of magnetic field in double quantum well heterostructure Cd1−xMgxTe/Cd1−yMgyTe/Cd1−xMgxTe/Cd1−zMnzTe/Cd1−xMgxTe in external magnetic field are studied. The structure contains diluted magnetic semiconductor (Cd,Mn)Te layer that forms magnetic quantum well with the depth depending on the magnetic field intensity. Above some magnetic field the indirect exciton becomes the lowest excited state of the system. The indirect exciton lifetime exceeds by several orders of magnitude of the direct exciton one. The range of quantum well widths for which the indirect exciton is the exciton lowest state was estimated for the proposed system.