Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics

For the first time, the potential impact of high-κ gate dielectrics on carbon nanotube field-effect transistors (CNTFETs) is studied over a wide range of dielectric permittivities using a two-dimensional model. It is found that the high-κ CNTFETs afford high ON currents and subthreshold swings near its theoretical limit. Likewise average electron velocity at the top of the barrier increases. Key transistor performance parameters, transconductance and carrier mobility improve for high-κ CNTFETs.