Author/Authors :
S.J. Oh، نويسنده , , M.N. Jung، نويسنده , , S.Y. Ha، نويسنده , , S.G. Choi، نويسنده , , J.J. Kim، نويسنده , , K. Kobayashi، نويسنده , , Raymond S.T. Lee، نويسنده , , H.C. Lee & E.M. Baggs، نويسنده , , Y.R. Cho، نويسنده , , T. Yao، نويسنده , , J.H. Chang، نويسنده ,
Abstract :
Ga-doped zinc oxide (ZnO) (ZnO:Ga) nanocrystals were synthesized by the vapor-solidification method to investigate morphological and structural evolution induced by Ga-incorporation. Ga-content was controlled in the full composition range (0–100%). As the Ga-content increased, the shape of nanocrystals changed from tetrapod- to rod-type. Hard X-ray photoemission spectroscopy (HXPES) measurement indicates that highly Ga-doped uniphase ZnO:Ga nanocrystals without a serious deterioration of morphology are achieved, which strongly suggests the feasibility of Ga as a successful n-type dopant for ZnO-based nanocrystals.
