Title of article
Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn δ-layer
Author/Authors
S.V. Zaitsev، نويسنده , , V.D. Kulakovskii، نويسنده , , M.V. Dorokhin، نويسنده , , Yu. A. Danilov، نويسنده , , P.B. Demina، نويسنده , , M.V. Sapozhnikov، نويسنده , , O.V. Vikhrova، نويسنده , , B.N. Zvonkov، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2008
Pages
3
From page
652
To page
654
Abstract
Strong enhancement of electroluminescence intensity and high degree of its circular polarization (up to 50% at low temperature T=1.8 K and magnetic field B=9 T) are demonstrated in Schottky diodes with near contact InGaAs/GaAs quantum well and Mn δ-layer. High values of polarization degree are suggested to be due to effective exchange interaction of holes with magnetic moments of Mn atoms in the nearby δ-layer that is confirmed by peculiarities in the temperature dependence of resistance, typical to ferromagnetic semiconductors.
Keywords
Schottky diode , Mn ?-layer , Ferromagnetic semiconductor , Circular polarization degree , Exchange interaction , Electroluminescence
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2008
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1047647
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